inchange semiconductor isc product specification isc website www.iscsemi.cn isc triacs BTB04-600SL features with to-220ab non insulated package suitables for general purpose applicati ons where gate high sensitivity is required. application on 4q such as phase control and st atic switching. absolute maximum ratings(ta=25 ) symbol parameter min unit v drm repetitive peak off-state voltage 600 v v rrm repetitive peak reverse voltage 600 v i t(rms) rms on-state current (full sine wave)t j =105 4 a i tsm non-repetitive peak on-state current t p =20ms 35 a t j operating junction temperature 110 t stg storage temperature -45~150 r th(j-c) thermal resistance, junction to case 3 /w r th(j-a) thermal resistance, junction to ambient 60 /w electrical characteristics (t c =25 unless otherwise specified) symbol parameter conditions max unit i rrm repetitive peak reverse current v r =v rrm , v r =v rrm , tj=125 0.01 0.5 ma i drm repetitive peak off-state current v d =v drm , v d =v drm , tj=125 0.01 0.5 ma i gt gate trigger current v d =12v; r l = 33 10 ma 10 10 25 i h holding current i gt = 0.1a, gate open 15 ma v gt gate trigger voltage all quadrant v d =12v; r l = 30 1.3 v v tm on-state voltage i t = 5a ; t p = 380 s 1.5 v
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